By Shuo Tang, Daryoosh Saeedkia
This introductory, but in-depth, ebook explains the actual ideas of digital imaging and sensing and gives the reader with the knowledge essential to comprehend the layout, operation, and sensible purposes of latest digital imaging and sensing platforms. The textual content has robust functional concentration and includes examples of biomedical purposes of optical digital imaging and sensing. every one bankruptcy attracts upon the authors’ huge learn, instructing, and business adventure and gives an invaluable source for undergraduate and graduate scholars, in addition to a handy reference for scientists and engineers operating within the box of digital imaging and sensing.
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Additional info for Advances in imaging and sensing
Rana, Very slow cooling dynamics of photoexcited carriers in graphene observed by optical-pump terahertz-probe spectroscopy, Nano Lett. 11, 4902–4906 (2011). 70. T. Winzer, A. Knorr, and E. Malic, Carrier multiplication in graphene, Nano Lett. 10, 4839–4843 (2010). Theory and Experiments on THz Devices on Graphene 35 71. A. G. V. V. D. N. P. Svirko, Broadband light-induced absorbance change in multilayer graphene, Nano Lett. 11, 1540–1545 (2011). 72. T. Winzer and E. Malic, Impact of Auger processes on carrier dynamics in graphene, Phys.
J. Appl. 20 Normalized modulation depth δm ω /δm 0 versus modulation frequency ω/2π for different electron and hole collision frequencies ν. (After Ryzhii, V. , J. Appl. 54 THz for different collision frequencies ν. 5 μm). When the collision frequency is lower than the plasma characteristic frequency (ν < ωp), the plasma quality factor Q ( ≡ ωp/ν) exceeds unity. 19. At the 0th plasmon mode, the peak value of δmω/δm0 is ~6 at ν = 1 × 1012 Hz, that is, at momentum relaxation time τ = 1 ps. Recent works demonstrate an excellent quality of graphene synthesis having τ values larger than 1 ps at room temperature.
11b. Therefore, the plasma oscillations in the PA-GPMC constitute a single collective plasmon mode distributed over the entire area of the array, which leads to the enhanced superradiant electromagnetic emission from the array. 4 plasmOnic thz phOtOdetectiOn and phOtOmixinG Graphene-channel field-effect transistors (FETs) can form a lateral p–i–n junction in its original state at the source and/or drain ohmic metal contact portions depending on the fractions of the work functions of the metal electrodes and graphene and on the gate biasing condition.